Faculty details

Prof.Sanjay Kumar

Designation: Inspire Faculty

Department: Electronics Engineering

Email: sanjaykumar[at]iitism[dot]ac[dot]in

Contact Number: 6232487075

Office Number: +91-326-223-NA

Personal Page: Click Here

About Me: Dr. Kumar currently working as a DST-Inspire Faculty at the Department of Electronics Engineering, IIT(ISM) Dhanbad. He received his Ph.D. degree in Electrical Engineering from the Indian Institute of Technology Indore, Indore, India. Prior joining to IIT(ISM) Dhanbad, he was a Post-doc Research Associate at the School of Engineering, University of Edinburgh, Scotland, UK. He completed his M.Tech with Honours in Nanotechnology from the Centre of Nanotechnology, Rajasthan Technical University in 2016 and was conferred a university gold medal in the M.Tech program. He completed his B.Tech with Honours in Electronics and Communication Engineering from the Rajasthan Technical University, Kota, Rajasthan in 2013. He was awarded the prestigious DST-Inspire fellowship (both PhD and Faculty levels) from the Department of Science & Technology (DST), New Delhi in 2018 and 2024 for his research. He was also awarded the prestigious National Postdoc Fellowship (N-PDF) from the Science and Engineering Research Board (SERB), New Delhi in 2024. He has also received several prestigious IEEE awards such as “The IEEE NTC Best Chapter Award 2021” and the “2022 Darrel Chong Student Activity Award” as a chair and founding member of the IEEE Nanotechnology Council (NTC) Student Chapter IIT Indore. He holds one grated Indian patent, 30 high-quality peer-reviewed journals, 15 national and international conferences, and 4 book chapters. He is an active member of IEEE since 2023.

Research Interest: Emerging Non-volatile Memories (ReRAM/Memristive) Devices, Heterostructure-based Optoelectronic Memories, Neuromorphic/Brain-inspired Computation, Memcapacitive Devices, Memristive devices for Bionic Visual Systems, Micro/Nanofabrication, Capacitive Transducers/Sensors

Teaching

List of Taught Courses and Labs

1.  Microelectronics Technology (MT)

2. Internet of Things (IoT)

3. Digital Systems Design Lab

4. Basic of Electronics Engineering Lab

5. Embedded System Design lab

Academics

B.Tech (ECE) (Honours)                                   Rajasthan Technical University (RTU), Kota, Rajasthan.        July 2009-May 2013

M.Tech (Nanotechnology) (Honours)             Rajasthan Technical University (RTU), Kota, Rajasthan.        Aug 2014-Sept 2016

Ph.D (Electrical Engineering)                           Indian Institute of Technology Indore (IIT Indore)              Jan 2018-Feb 2023

Position

Postdoc Research Associate                    School of Engineering, The University of Edinburgh, Scotland, UK               May 2023-June 2024

DST-Inspire Faculty                                 Department of Electronics Engineering, IIT(ISM) Dhanbad, JK, India             June 2024-Till date

Awards and Honors

1. University (RTU, Kota, Rajasthan) Teaching Assistant (TA) fellowship during M.Tech program (Sept 2014-Aug 2016). 

2. University (RTU, Kota, Rajasthan) 1st Rank in M.Tech (2014-2016), (Gold Medalist).

3. Received Teaching Assistant (TA) fellowship during PhD program at IIT Indore (Jan 2018-April 2018).

4. Received the prestigious DST-Inspire Faculty Fellowship Award in March 2024.

5. Received a prestigious National Postdoc Fellowship (NPDF) from the Science and Engineering Research Board (SERB), New Delhi with the association of the Indian Institute of Science (IISc), Bangalore in 2024.

6. Received the prestigious DST-Inspire PhD Fellowship Award in May 2018.

7. Won the prestigious IEEE NTC Best Chapter Award 2021 as a Chair and Founding member, IEEE NTC Student Chapter IIT Indore, (“1st position in all around the world under the category of “For creating an interactive platform to incorporate design and development of nanotechnology and it's scientific, engineering, and industrial applications”).

8. Won the prestigious Darrel Chong Student Activity Award 2022-Bronze as a Chair and Founding member, IEEE NTC Student Chapter at IIT Indore, (“3rd position in all around the world under the category of “Distinguished Lecture Series”) on Nanotechnology Enabled Memristive Devices and Systems for Neuromorphic Computation and its Associate Applications.

9. As a Lead Organizer, won the Grant of USD 8100 under the call for the 2022 IEEE Electron Device Society (EDS) Upskilling Course for hosting technical program and skill enhancement sessions on “Electric Vehicle (EV) Mobility and Solutions at the IEEE EDS Chapters IIT Indore. (“1st position in all around the world”).

10. Secured research funding up to  ̴ INR 1.64 Crores ( ̴ USD 195K) during Ph.D, Postdoc, and Faculty terms (From 2018-2024).

11. Academic Advisor, Summer School Program, IEEE NTC Student Chapter IIT Indore; Received funding of USD 5000 (“1st position in all around the world”).

12. Member, IEEE (Membership No. 93761724), (Including the following IEEE Societies: IEEE Nanotechnology Council (NTC), IEEE Electron Device Society (EDS), and IEEE Sensors Council) from December 2022-Till date.

13. Organizing Head and Chair, IEEE Nanotechnology Council Student Chapter IIT Indore (March 2021 to November 2021).

14. Secretary, IEEE Sensors Council Student Chapter IIT Indore (July 2022- February 2023).

15. Webmaster, IEEE Madhya Pradesh Section Electron Device Society (EDS) Chapter (June 2022- February 2023).

16. Executive Member, IEEE Madhya Pradesh Section Electron Device Society (EDS) Chapter (February 2023-Till date).

17. Event Head, Student Research Symposium (SRS’22), sponsored by IEEE NTC and IEEE EDS Chapters at IIT Indore.

18. Organizing Host, Research pe Charcha: Nanotechnology, sponsored by IEEE NTC Student Chapter at IIT Indore.

19. Advisory Committee Member, Student Research Symposium (SRS’23), sponsored by IEEE NTC Student and IEEE EDS Chapters at IIT Indore.

20. Advisor, IEEE NTC Student Branch Chapter, IIT(ISM) Dhanbad (July 2024-Till date)
 

Publications

Books Published

1. S. Rani, P. Kumar, S. Kumar, “Carbon Nanotubes: A Superior Material for Future Electronics Devices”, Semiconductor Materials (volume-1), AkiNik Publication, pp. 47-62, 2020, DOI: 10.22271/ed.book.946.
2. S. Rani, S. Kumar, and R. Bhardwaj, “Role of Carbon Nanotube for Flexible Supercapacitor Application”, Carbon Nanotubes - Recent Advances, New Perspective,s and Potential Applications, intechopen, 2022, DOI: 10.5772/intechopen.108022.
3. P. Kumar, S. Rani, and S. Kumar, “Smart Solid Electrolyte Materials in Energy Storage Devices: Batteries”, Smart Materials for Science and Engineering, Wiley, Print ISBN: 9781394185818, Online ISBN: 9781394186488, DOI: 10.1002/9781394186488, 2024, Chapter DOI: 10.1002/9781394186488.ch10.
4. S. Rani, S. Kumar, R. Singh, and P. Kumar, “Surface Engineered 2D TMD Materials for Advanced Wearable Biosensors”, 2D Materials: Sensing Applications, Springer Nature, Print ISBN: 978-981-97-6257-6, DOI: 10.1007/978-981-97-6258-3_3.

List Of Research Publications (only in Peer-reviewed Journals)

Recent Publications [After joining IIT(ISM) Dhanbad]

1. S. Kumar, D. Yadav, R. Ramesh, S. Stathopoulos, A. Tsiamis, and T. Prodromakis, “Electrical Analysis of Atomic Layer Deposited Thin HfO2 and HfO2/Ta2O5-based Memristive Devices”, IEEE Transactions on Electron Devices, vol. 72, no. 4, 2025, DOI: 10.1109/TED.2025.3539256. (IF: 2.9)

2. M. Dubey, S. Kumar, S. Yadav, C. Patel, S. Chaudhary, and S. Mukherjee, “A Comprehensive Approach Toward Achieving High-Efficiency CTGSSe-Based Solar Cells”,  IEEE Transactions on Electron Devices, vol. 71, no. 10, 2024, pp. 6098 - 6103, DOI: 10.1109/TED.2024.3429082. (IF: 2.9)

3. D. Yadav, H. Levenne, S. Stathopoulos, R. Ramesh, S. Kumar, and T. Prodromakis, “Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching with Annealing”, IEEE Transactions on Electron Devices, vol. 72, no. 5, 2025, DOI: 10.1109/TED.2025.3547291. (IF: 2.9)

4. P. Shakya, M. S. Khan, S. Kumar, D. Jhankal, N. Verma, and K. Sachdev, “Understanding the gas sensing mechanism of MoSe2 nano-roses and rGO composite-based chemiresistive sensors for room temperature NO2 detection”, Chemical Engineering Journal, vol. 503, no. 158178, 2024, DOI: 10.1016/j.cej.2024.158178. (IF: 13.4).

5. P. Shakya, M. S. Khan, S. Kumar, D. Jhankal, N. Verma, and K. Sachdev, “Room-Temperature 2H-WSe2/rGO Composite-based NO₂ Gas Sensor with Long-Term Stability”, IEEE Sensors Journal, DOI: 10.1109/JSEN.2025.3553920. (IF: 4.3).

6. S. Rani, G. Khandelwal, S. Kumar, S. C. Pillai, G. K. Stylios, N. Gadegaard, and D. M. Mulvihill, “Flexible self-powered supercapacitors integrated with triboelectric nanogenerators”, Energy Storage Materials, vol. 74, no. 103977, DOI: 10.1016/j.ensm.2024.103977. (IF: 18.9).

7. P. S. Thorat, D. D. Kumbhar, R. Oval, S. Kumar, M. Awale, T. V. Ramanathan, A. C. Khot, T. G. Kim, S. S. Sutar, and T. D. Dongale, “On the Time Series Analysis of Resistive Switching Devices”, Microelectronic Engineering, vol. 297, no. 112306, DOI: 10.1016/j.mee.2024.112306. (IF: 2.6)

8. S. Kumar, D. Yadav, S. Stathopoulos, and T. Prodromakis, “Performance and Variability Analysis of ALD-grown Wafer Scale HfO2/Ta2O5-based Memristive Devices for Neuromorphic Computing”, IEEE Transactions on Electron Devices, [Under review]

9. Aarti, S. Kumar#, S. Rani, M. K. Gautam, Roshni Bahu, I. Zeimpekis and D. G. Georgiadou, “Energy-efficient Optoelectronic Memories Powered by 2D Layered Materials: A Leap Toward Bionic Vision”, Advanced Functional Materials, (IF: 18.5) (Under Review). (#Corresponding author)

10. Aarti, S. Kumar#, and S. Mukherjee, “Progress, Perspectives and Future Outlook of Yttrium Oxide-based Memristive Devices for Data Storage, Multi-bit Programming and Neuromorphic Computing: A Systematic Review”, ACS Applied Electronic Materials, (IF: 4.4) (Under Review) (#Corresponding author)

11. S. Rani, G. Khandelwal, S. Kumar, A. Alyana, S. C. Pillai, G. K. Stylios, N. Gadegaard, and D. M. Mulvihill, “Flexible and twistable yarn supercapacitor via electrodeposition of ZnMn2O4 nanostructures for wearable electronics”, Chemical Engineering Journal, (IF: 13.4) (Under Review).

Previous Publications [Before IIT(ISM) Dhanbad]

12. S. Kumar, M. K. Gautam, S. Yadav, and S. Mukherjee, “Memcapacitive to Memristive Transition in Al/Y2O3/GZO Crossbar Array”, IEEE Transactions on Electron Devices, vol. 70, no. 6, 2023, DOI: 10.1109/TED.2023.3265622. (IF: 3.2)

13. S. Kumar, D. D. Kumbhar, T. D. Dongale J. H. Park, R. K. Kamat, and S. Mukherjee, “Y2O3 Crossbar Array for Analog and Neuromorphic Computation”, IEEE Transactions on Electron Devices, vol. 70, no. 2, 2022, DOI: 10.1109/TED.2022.3227890. (IF: 3.2)

14. S. Kumar, M. Das, M. T. Htay, S. Sriram and S. Mukherjee, “Electroforming-free Y2O3 Memristive Crossbar Array with Low Variability”, ACS Applied Electronic Materials, vol. 4, no.6, 2022, DOI: 10.1021/acsaelm.2c00472. (IF: 4.4)

15. S. Kumar, A. Agarwal, and S. Mukherjee, “Electrical Performance of Large-area Y2O3 Memristive Crossbar Array with Ultralow C2C Variability”, IEEE Transactions on Electron Devices, vol. 69, no. 7, 2022, DOI: 10.1109/TED.2022.3172400. (IF: 3.2)

16. S. Kumar, M. K. Gautam, G. S. Gill, and S. Mukherjee, “3-D Physical Electro-Thermal Modeling of Nanoscale Y2O3 Memristors for Synaptic Application”, IEEE Transactions on Electron Devices, vol. 69, no. 6, 2022, DOI: 10.1109/TED.2022.3166858. (IF: 3.2)

17. S. Kumar, R. Agrawal, M. Das, K. Jyoti, P. Kumar, and S. Mukherjee, “Analytical Model for Memristive Systems for Neuromorphic Computation”, Journal of Physics D: Applied Physics, vol. 54, no. 35 (355101), 2021, DOI: 10.1088/1361-6463/ac07dd. (IF: 3.169)

18. S. Kumar, R. Agrawal, M. Das, P. Kumar, and S. Mukherjee, “Analytical modeling of Y2O3-based memristive system for synaptic applications”, Journal of Physics D: Applied Physics, vol. 53, no. 30, 2020, DOI: 10.1088/1361-6463/ab810e. (IF: 3.169)

19. S. Kumar#, M. Dubey, M. Nawaria, M. K. Gautam, M. Das, R. Bhardwaj, S. Rani, and S. Mukherjee, “Investigation of Filament Formation and Surface Perturbation in Nanoscale-Y2O3 Memristor: A Physical Modelling Approach,” Springer Nature Journal of Electronic Materials, vol. 53, pp. 2965-2972, 2024, DOI: 10.1007/s11664-024-10967-4. (IF: 2.2) (#Corresponding author)

20. M. K. Gautam*, S. Kumar*, S. Chaudhary, L. K. Hindoliya, D. D. Kumbhar, J. H. Park, M. T. Htay, and S. Mukherjee, “Experimental Validation of Switching Dependence of Nanoscale-Y2O3 Memristor on Electrode Symmetry via Physical Electro-Thermal Modeling,” ACS Applied Electronic Materials, vol. 5, no. 7, 2023, DOI: 10.1021/acsaelm.3c00598. (IF: 4.7) (*Joint first author)

21. D. D. Kumbhar*, S. Kumar*, M. Dubey, A. Kumar, T. D. Dongale, S. D. Pawar, and S. Mukherjee, “Exploring Statistical Approaches for Accessing the Reliability of Y2O3-based Memristive Devices”, Microelectronic Engineering, vol. 288, no. 112166, 2024, DOI: 10.1016/j.mee.2024.112166. (IF: 2.3) (*Joint first author)

22. M. K. Gautam*, S. Kumar*,#, S. Rani, I. Zeimpekis and D. G. Georgiadou, “2D MoS2 Monolayers Integration with Metal Oxide-based Artificial Synapses”, Frontiers in Nanotechnology-Nanoelectronics, vol. 6, 2024, DOI: 10.3389/fnano.2024.1400666. (IF: 4.1), (*Joint first author, #Corresponding author)

23. M. Nawaria, S. Kumar, M. K. Gautam, N. S. Dhakad, R. Singh, S. Singhal, P. Kumar, S. K. Vishvakarma, and S. Mukherjee, “Memristor-inspired Digital Logic Circuits and Comparison with 90-/180-nm CMOS Technologies”, IEEE Transactions on Electron Devices, vol. 71, no. 1, 2023, pp. 301-307, DOI: 10.1109/TED.2023.3278625 (IF: 3.2)

24. S. S. Ghodke, S. Kumar#, S. Yadav, N. S. Dhakad, and S. Mukherjee, “Combinational Logic Circuits Based on Power and Area Efficient Memristor with Low Variability”, Journal of Computational Electronics, Springer Nature, vol. 23, pp. 131-141, 2023, DOI: 10.1007/s10825-023-02117-6. (IF: 2.1) (#Corresponding author)

25. M. K. Gautam, S. Kumar, and S. Mukherjee, “Y2O3-based Memristive Crossbar Array for Synaptic Learning”, Journal of Physics D: Applied Physics, vol. 55, no. 20, 2022, DOI: 10.1088/1361-6463/ac485b. (IF: 3.2)

26. M. Dubey, G. Siddharth, R. Singh, C. Patel, S. Kumar, M. T. Htay, V. V. Atuchin, and S. Mukherjee, “Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S, Se)3 Thin Films for Solar Cell Application”, IEEE Transactions on Electron Devices, vol. 69, no. 5, 2022, DOI: 10.1109/TED.2022.3159509. (IF: 2.9)

27. M. Dubey, S. Chaudhary, C. Patel, B. Mahapatra, S. Kumar, P. Kumar, M. T. H. Yamamoto, and S. Mukherjee, “Realization of High Photovoltaic Efficiency Devices with Sb2S3 Absorber Layer”,  IEEE Transactions on Electron Devices, vol. 71, no. 2, 2024, DOI: 10.1109/TED.2023.3346852. (IF: 3.1)

28. R. G. Jadhav, A. Kumar, S. Kumar, S. Maiti, S. Mukherjee, and A. K. Das, “Benzoselenadiazole-Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices”, ChemPlusChem, vol. 85, no. 5, 2020, DOI: 10.1002/cplu.202000229. (IF: 2.753).

29. M. Das, A. Kumar, S. Kumar, B. Mandal, G. Siddharth, P. Kumar, M. T. Htay and S. Mukherjee, “Impact of Interfacial SiO2 on Dual Ion Beam Sputtered Y2O3-based Memristive System”, IEEE Transactions on Nanotechnology, vol. 19, 2020, DOI: 10.1109/TNANO.2020.2987200. (IF: 2.196).

30. P. Kumar, M. A. Khan, G. Siddharth, S. Kumar, R. Singh, and S. Mukherjee, “Electron scattering analysis in 2DEG in sputtering-grown MgZnO/ZnO heterostructure”, Journal of Physics D: Applied Physics, vol. 53, no. 125108, 2019, DOI: 10.1088/1361-6463/ab6467. (IF: 3.169)

31. M. Das, A. Kumar, S. Kumar, B. Mandal, M. A. Khan, and S. Mukherjee, “Effect of Surface Variation on the Performance of Yttria-based Memristive System”, IEEE Electron Device Letters, vol. 39, No. 12, 2018, DOI: 10.1109/LED.2018.2878953. (IF: 4.221)

32. G. S. Gill, S. Kumar, R. Mukhiya, and V. K. Khanna, “FEM of Air-Coupled Circular Capacitive Micromachined Ultrasonic Transducer for Anodic Bonding Process using SOI Wafer”, Application of Modelling and Simulation, vol. 6, 2022.

33. S. Kumar, S. Tanwar, and S. K. Sharma, “Nanoantenna-A Review on Present and Future Perspective”, International Journal of Science, Engineering, and Technology, vol. 4, no. 01, 2016. (IF: 6.09)

Papers in conference abstract volumes / presented

1. S. Kumar, R. Agrawal, P. Kumar, and S. Mukherjee, “Numerical Modelling of WO3-based Memristive System for Neuromorphic Computation”, 21st International Workshop on Physics of Semiconductor Device: IWPSD 2021, IIT Delhi, India, December 14-17, 2021, DOI: 10.1007/978-981-97-1571-8_45. [Springer Conference Proceeding]
2. S. Kumar, M. Das, K. Jyoti, A. Shukla, A. Kataria, and S. Mukherjee, “Analytical Modelling of Y2O3-based Memristive System for Artificial Synapses”, 5th International Conference on Emerging Electronics (ICEE 2020), IIT Delhi, India, November 26th-28th, 2020, DOI: 10.1109/ICEE50728.2020.9777072. [IEEE Xplore Proceeding] 
3. S. Kumar, M. Das, R. Agrawal, and S. Mukherjee, “Impact of Grain Surface Area on the Performance of Yttria-based Memristive System”, 20th International Workshop on Physics of Semiconductor Device: IWPSD 2019, Kolkata, India, December 17-20, 2019.
4. S. Kumar, M. Das, A. Kumar, M. T. Htay, and S. Mukherjee, “Yttrium Oxide based Resistive Switching Device for Synaptic Applications”, 6th Nano Today Conference, Lisbon, Portugal, June 17-20,2019.
5. S. Kumar, R. Mukhiya, S. Tanwar, R. Sharma, and V. K. Khanna “Simulation Study of Different Capacitive Micromachined Ultrasonic Transducers (CMUTs) Structure”, 3rd International Conference of Young Researcher in Advanced Materials (IUMRS-ICYRAM), Material Research Society, IISc, Bangalore, 11-15 Dec- 2016.
6. M. Das, S. Kumar, A. Kumar, B. Mandal, and S. Mukherjee, “Effect of roughness on the resistive switching of yttrium oxide-based system”, 10th International Conference on Materials for Advanced Technologies (ICMAT), Singapore, June 23-28, 2019.
7. M. Das, S. Kumar, M. A. Khan, B. Mandal, M. T. Htay, and S. Mukherjee, “Effect of roughness on the resistive switching of yttrium oxide-based system,” 7th International Symposium on Organic and Inorganic Electronic Material and Related Nanotechnologies (EM-NANO), Nagano, Japan, June 19-22, 2019.
8. A. Kumar, M. Das, S. Kumar, R. Singh, P. Kumar, A. Kranti, and S. Mukherjee, “Dual Ion Beam Sputtered RRAMs Exhibiting Quantum Conductance”, Materials Research Society (MRS) Spring Meeting, Phoenix, Arizona, USA, April 22-26, 2019.
9. A. Kumar, M. Das, B. S. Sengar, V. Garg, Aaryashree, S. Kumar, A. Kranti, and S. Mukherjee, “Influence of Bulk/Interface Anomalies Upon Resistive Switching in Dual Ion Beam Sputtered ZnO Based Memristive Devices”, Materials Research Society (MRS) Spring Meeting, Phoenix, Arizona, USA, April 22-26, 2019.
10. M. Das, A. Kumar, S. Kumar, B. Mandal, P. Kumar, and S. Mukherjee, “Impact of Schottky junction on the resistive switching of yttrium oxide”, 9th International Conference on Key Engineering Materials, Oxford University, United Kingdom, March 29-April 1, 2019.
11. M. Das, A. Kumar, S. Kumar, B. Mandal, P. Kuma,r and S. Mukherjee, “Impact of Metal/Semiconductor Junctions in the Resistive Switching of Yttria Based Memristive System”, Materials Research Society (MRS) Spring Meeting, Phoenix, Arizona, USA, April 22-26, 2019.
12. A. Kumar, M. Das, S. Kumar, R. Singh, P. Kumar, A. Kranti, and S. Mukherjee, “Role of interface modulation during resistive switching for ZnO based RRAMs”, 1st Indian Materials Conclave and 30th Annual General Meeting of MRSI (MRSI-AGM), IISc Bangalore, Feb-2019.
13. M. Das, A. Kumar, S. Kumar, B. Mandal, and S. Mukherjee, “Effect of Schottky Junctions in Y2O3 Based Memristive Devices”, 4th International Conference on Emerging Electronics (ICEE), CeNSE, IISc, Bangalore, December-2018.
14. A. Kumar, M. Das, S. Kumar, R. Bhardwaj, M. A. Khan, A. Kranti, and S. Mukherjee, “Role of interface anomalies in DIBS fabricated ZnO based RRAM exhibiting Quantum conductance”, 4th International Conference on Emerging Electronics, CeNSE, IISc, Bangalore, December-2018.
15. G.S. Gill, S. Kumar, R. Mukhiya, and V. K. Khanna, “FEM-based Study of CMUT Cell for Vacuum-Sealed and Unsealed Cavities”, 3rd International Conference on Emerging Technologies, Micro to Nano (ETMN-2017), American Institute of Physics (AIP) Proceeding, Solapur, 06-07, Oct-2017.

Patents

1. Title: “Silicon compatible yttria-based memristive crossbar array and a method of fabrication thereof”, Inventors: S. Mukherjee, S. Kumar, M. Das, K. Jyoti, Granted, February 26, 2024, Patent No. 515267, (Published, June 25, 2021, Patent No. 202121013663).

Projects & Activities

Sponsored Research Projects (External Funded)

Title: Light-Triggered 2D Materials Integrated Metal Oxides-based Memristive Crossbar Array for Bionic Visual Application

Funding Agency: Department of Science & Technology (DST), New Delhi

Amount: INR 1,12,40,000

Duration: 2024-2029

Guidance

List of PhD Students:

1. Ms. Aarti

List of M.Tech Students:

1. Mr. Paras Tiwari

2. Mr. Mayuresh Kumar Mishra

3. Mr. Khashring Dao Jidung